FJA4213OTU ,PNP Epitaxial Silicon TransistorFJA4213FJA4213Audio Power Amplifier High Current Capability I = -15AC High Power DissipationWide ..
FJA4213RTU ,PNP Epitaxial Silicon TransistorFJA4213FJA4213Audio Power Amplifier High Current Capability I = -15AC High Power DissipationWide ..
FJA4310 ,Audio Power AmplifierFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FJA4310RTU ,NPN Epitaxial Silicon TransistorFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FJA4310YTU ,NPN Epitaxial Silicon TransistorFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FJAF4210OTU ,PNP Epitaxial Silicon TransistorFJAF4210FJAF4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation• ..
FST16232MTDX ,Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST16232 is a 16-bit to 32-bit high-
FJA4213OTU-FJA4213RTU
PNP Epitaxial Silicon Transistor
FJA4213 FJA4213 Audio Power Amplifier High Current Capability I = -15A C High Power Dissipation Wide S.O.A Complement to FJA4313 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage -230 V CBO V Collector-Emitter Voltage -230 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -15 A C I Base Current -1.5 A B P Collector Dissipation (T =25°C) 130 W C C T Junction Temperature 150 °C J T Storage Temperature - 50 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-5mA, I =0 -230 V CBO C E BV Collector-Emitter Breakdown Voltage I =-10mA, R =∞ -230 V CEO C BE BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -5 V EBO E C I Collector Cut-off Current V =-230V, I =0 -5.0 μA CBO CB E I Emitter Cut-off Current V =-5V, I =0 -5.0 μA EBO EB C h * DC Current Gain V =-5V, I =-1A 55 160 FE1 CE C h DC Current Gain V =-5V, I =-7A 35 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =-8A, I =-0.8A -0.4 -3.0 V CE C B V (on) Base-Emitter On Voltage V =-5V, I =-7A -1.0 -1.5 V BE CE C f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz T CE C C Output Capacitance V =-10V, f=1MHz 360 pF ob CB * Pulse Test : PW=20us *h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 ©2003 Rev. A, March 2003
