FJA4210 ,PNP Epitaxial Silicon TransistorFJA4210FJA4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation•Wi ..
FJA4213OTU ,PNP Epitaxial Silicon TransistorFJA4213FJA4213Audio Power Amplifier High Current Capability I = -15AC High Power DissipationWide ..
FJA4213RTU ,PNP Epitaxial Silicon TransistorFJA4213FJA4213Audio Power Amplifier High Current Capability I = -15AC High Power DissipationWide ..
FJA4310 ,Audio Power AmplifierFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FJA4310RTU ,NPN Epitaxial Silicon TransistorFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FJA4310YTU ,NPN Epitaxial Silicon TransistorFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FST16232 ,Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchFST16232 Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchJuly 1997Revised December ..
FST16232 ,Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST16232 is a 16-bit to 32-bit high-
FJA4210
PNP Epitaxial Silicon Transistor
FJA4210 FJA4210 Audio Power Amplifier • High Current Capability : I = -10A C • High Power Dissipation •Wide S.O.A • Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current (DC) -10 A C I Base Current (DC) -1.5 A B P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-5mA, I =0 -200 V CBO C E BV Collector-Emitter Breakdown Voltage I =-50mA, R =∞ -140 V CEO C BE BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -6 V EBO E C I Collector Cut-off Current V =-200V, I =0 -10 μA CBO CB E I Emitter Cut-off Current V =-6V, I =0 -10 μA EBO EB C h * DC Current Gain V =-4V, I =-3A 50 180 FE CE C V (sat) Collector-Emitter Saturation Voltage I =-5A, I =-0.5A -0.5 V CE C B C Output Capacitance V =-10V, f=1MHz 400 pF ob CB f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz T CE C * Pulse Test : PW=20μs h Classification FE Classification R O Y h 50 ~ 100 70 ~ 140 90 ~ 180 FE ©2002 Rev. B, June 2002
