FJA13009TU ,NPN Silicon TransistorFJA13009FJA13009High Voltage Switch Mode
FJA13009TU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base ..
FJA4210 ,PNP Epitaxial Silicon TransistorFJA4210FJA4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation•Wi ..
FJA4213OTU ,PNP Epitaxial Silicon TransistorFJA4213FJA4213Audio Power Amplifier High Current Capability I = -15AC High Power DissipationWide ..
FJA4213RTU ,PNP Epitaxial Silicon TransistorFJA4213FJA4213Audio Power Amplifier High Current Capability I = -15AC High Power DissipationWide ..
FJA4310 ,Audio Power AmplifierFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FST162245MTDX ,16-Bit Bus Switch with 25 Ohm Series Resistors in OutputsFeaturesThe Fairchild Switch FST162245 provides 16-bits of high- 25Ω switch connection between tw ..
FST16232 ,Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchFST16232 Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchJuly 1997Revised December ..
FST16232 ,Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST16232 is a 16-bit to 32-bit high-
FJA13009TU
NPN Silicon Transistor
FJA13009 FJA13009 High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor Control TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 130 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 10mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 7V, I = 0 1 mA EBO EB C h DC Current Gain V = 5V, I = 5A 8 40 FE CE C V = 5V, I = 8A 6 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 1A 1 V CE C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3 V C B V (sat) Base-Emitter Saturation Voltage I = 5A, I = 1A 1.2 V BE C B I = 8A, I = 1.6A 1.6 V C B C Output Capacitance V = 10V , f = 0.1MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V =125V, I = 8A 1.1 μs ON CC C I = - I = 1.6A t Storage Time B1 B2 3 μs STG R = 15,6Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty cycle≤2% Pulse ©2003 Rev. A, May 2003
