FGY75N60SMD ,600V, 75A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FH101 , High Dynamic Range FET
FH101-G , High Dynamic Range FET
FH101-G , High Dynamic Range FET
FH102 ,NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp ApplicationsFeaturesPackage Dimensions• Composite type with 2 transistors contained in the MCPunit: mmpackage c ..
FH12-50S-0.5SV , 0.5mm and 1mm Pitch Connectors For FPC/FFC
FSBF5CH60BS ,Smart Power ModuleGeneral DescriptionTMIt is an advanced motion-smart power module (Motion-SPM )• UL Certified No.E20 ..
FSBF5CH60BS ,Smart Power Moduleapplicationsshort-circuit protection. The high speed built-in HVIC providesopto-coupler-less single ..
FSBS10CH60 ,10A, Smart Power ModuleFSBS10CH60 Smart Power ModuleMarch 2005TMSPMFSBS10CH60Smart Power Module
FSBS10CH60 ,10A, Smart Power ModuleApplications• AC 100V ~ 253V three-phase inverter drive for small powerac motor drives• Home appli ..
FSBS10CH60 ,10A, Smart Power ModuleGeneral DescriptionTMIt is an advanced smart power module (SPM ) that Fairchild• UL Certified No.E2 ..
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FGY75N60SMD
600V, 75A, Field Stop IGBT
FGY75N60SMD 600 V, 75 A Field Stop IGBT April 2013 FGY75N60SMD 600 V, 75 A Field Stop IGBT General Description Features ® • High Current Capability Using novel field stop IGBT technology, Fairchild ’s new series nd of field stop 2 generation IGBTs offer the optimum • Low Saturation Voltage: V = 1.9 V @ I = 75 A CE(sat) C performance for solar inverter, UPS, welder and PFC • High Input Impedance applications where low conduction and switching losses are • Fast Switching: E = 10 uJ/A OFF essential. •RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C G G E Power-247 C E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage ± 20 V GES o Collector Current @ T = 25 C 150 A C I C o Collector Current @ T = 100 C 75 A C o I Pulsed Collector Current 225 A CM (1) @ T = 25 C C o Diode Forward Current @ T = 25 C 75 A C I F o Diode Forward Current @ T = 100 C 50 A C A I Pulsed Diode Maximum Forward Current 225 FM (1) o Maximum Power Dissipation @ T = 25 C 750 W C P D o Maximum Power Dissipation @ T = 100 C 375 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature. ©2010 1 FGY75N60SMD Rev. C0
