FGS15N40LTF ,Discrete, IGBTFGS15N40LSeptember 2001 IGBTFGS15N40L
FGY75N60SMD ,600V, 75A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FH101 , High Dynamic Range FET
FH101-G , High Dynamic Range FET
FH101-G , High Dynamic Range FET
FH102 ,NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp ApplicationsFeaturesPackage Dimensions• Composite type with 2 transistors contained in the MCPunit: mmpackage c ..
FSB6726 ,PNP General Purpose AmplifierFSB6726 FSB6726C EB TM SuperSOT -3 PNP Gener ..
FSB749 ,PNP Low Saturation TransistorFSB749 FSB749CTM SuperSOT -3 PNP Low Satur ..
FSB749 ,PNP Low Saturation TransistorFSB749 FSB749CTM SuperSOT -3 PNP Low Satur ..
FSB749 ,PNP Low Saturation Transistorapplications involving pulsed or low duty cycle ope 1) These ratings are based on a maximum j ..
FSBB15CH60 ,15A, Smart Power ModuleGeneral DescriptionTMIt is an advanced smart power module (SPM ) that Fairchild• UL Certified No.E2 ..
FSBB15CH60C ,Motion SPM?3 Series
FGS15N40LTF
Discrete, IGBT
FGS15N40L September 2001 IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors(IGBTs) with trench • High Input Impedance gate structure have superior performance in conductance • High Peak Current Capability (130A) and switching to planar gate structure and also have wide • Easy Gate Drive noise immunity. These devices are well suitable for strobe application Application • Strobe Flash C C C C G C E G E E 8-SOP E Absolute Maximum Ratings T = 25°C unless otherrwise noted C Symbol Description FGS15N40L Units V Collector-Emitter Voltage 400 V CES V Gate-Emitter Voltage ± 6V GES I Pulsed Collector Current 130 A CM (1) P Maximum Power Dissipation @ T = 25°C2.0 W C a T Operating Junction Temperature -40 to +150 °C J T Storage Temperature Range -40 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L PurPoses from case for 5 secnds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Ambient(PCB Mount) -- 62.5 °C/W θJA Notes: Mounted on 1” square PCB(FR4 or G-10 Material) ©2001 FGS15N40L Rev. A1
