FGPF50N33BT ,330V PDP Trench IGBTApplications•PDP TVTO-220F G C EAbsolute Maximum RatingsSymbol Description Ratings UnitV Collector ..
FGPF50N33BT ,330V PDP Trench IGBTGeneral Description®• High Current Capability Using novel trench IGBT technology, Fairchild 's new ..
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FGPF50N33BT
330V PDP Trench IGBT
FGPF50N33BT 330 V PDP Trench IGBT April 2013 FGPF50N33BT 330 V PDP Trench IGBT Features General Description ® • High Current Capability Using novel trench IGBT technology, Fairchild 's new series of trench IGBTs offer the optimum performance for PDP TV appli- • Low Saturation Voltage: V =1.6 V @ I = 50 A CE(sat) C cations where low conduction and switching losses are essen- • High Input Impedance tial. •RoHS Compliant Applications •PDP TV TO-220F G C E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 330 V CES V Gate to Emitter Voltage 30 V GES o I Collector Current 50 A C @ T = 25 C C o I Pulsed Collector Current 120 A Cpulse (1)* @ T = 25 C C o I Pulsed Collector Current 160 A Cpulse (2)* @ T = 25 C C o Maximum Power Dissipation @ T = 25 C 43 W C P D o Maximum Power Dissipation @ T = 100 C 17.2 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 2.9 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D < 0.01, pluse width < 10usec *Ic_pluse limited by max Tj ©2008 1 FGPF50N33BT Rev. C0
