FGPF4536 ,360V PDP Trench IGBTGeneral Description®• High Current Capability Using novel trench IGBT technology, Fairchild ’s new ..
FGPF4536 ,360V PDP Trench IGBTApplications• PDP TV, Consumer appliances, LightingTO-220F G C E(Retractable)Absolute Maximum Rati ..
FGPF50N33BT ,330V PDP Trench IGBTApplications•PDP TVTO-220F G C EAbsolute Maximum RatingsSymbol Description Ratings UnitV Collector ..
FGPF50N33BT ,330V PDP Trench IGBTGeneral Description®• High Current Capability Using novel trench IGBT technology, Fairchild 's new ..
FGS15N40LTF ,Discrete, IGBTFGS15N40LSeptember 2001 IGBTFGS15N40L
FGY75N60SMD ,600V, 75A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FSB560A ,NPN Low Saturation TransistorFSB560/FSB560A FSB560 / FSB560AC EB TMSuperSOT -3 (SOT-23) NPN Lo ..
FSB619 ,NPN Low Saturation TransistorFSB619 Discrete Power & Signal Technologies July 1998 FSB619CTMSuperSOT -3 (SOT-23) NPN Low S ..
FSB649 ,NPN Low Saturation TransistorFSB649 FSB649CTM SuperSOT -3 NPN Low Saturation Tr ..
FSB660 ,PNP Low Saturation TransistorFSB660/FSB660A FSB660 / FSB660AC EB TMSuperSOT -3 ..
FSB660A ,PNP Low Saturation TransistorFSB660/FSB660A FSB660 / FSB660AC EB TMSuperSOT -3 ..
FSB6726 ,PNP General Purpose AmplifierFSB6726 FSB6726C EB TM SuperSOT -3 PNP Gener ..
FGPF4536
360V PDP Trench IGBT
FGPF4536 360 V PDP Trench IGBT April 2013 FGPF4536 360 V PDP Trench IGBT Features General Description ® • High Current Capability Using novel trench IGBT technology, Fairchild ’s new series of trench IGBTs offer the optimum performance for consumer • Low Saturation Voltage: V =1.59 V @ I = 50 A CE (sat) C appliances, PDP TV and lighting applications where low con- • High Input Impedance duction and switching losses are essential. • Fast Switching • RoHS Compliant Applications • PDP TV, Consumer appliances, Lighting TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 360 V CES V Gate to Emitter Voltage 30 V GES o Pulsed Collector Current @ T = 25 C 220 A I C C pulse(1)* o Maximum Power Dissipation @ T = 25 C 28.4 W C P D o Maximum Power Dissipation @ T = 100 C 11.4 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 4.4 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1 sec * Ic_pluse limited by max Tj ©2010 1 FGPF4536 Rev. C0
