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FGPF30N45T
450V, 30A PDP Trench IGBT
FGPF30N45T 450V, 30A PDP Trench IGBT April 2009 FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: V =1.55V @ I = 30A CE(sat) C tions where low conduction and switching losses are essential. • High input impedance • Fast switching Applications • PDP System C G TO-220F 1 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Description Ratings Units V Collector to Emitter Voltage 450 V CES V Gate to Emitter Voltage ±30 V GES o I Pulsed Collector Current 120 A CM (1) @ T = 25 C C o Maximum Power Dissipation @ T = 25 C 50.4 W C P D o Maximum Power Dissipation @ T = 100 C 20.1 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol Parameter Typ. Max. Units o R (IGBT) Thermal Resistance, Junction to Case - 2.48 C/W θJC o R Thermal Resistance, Junction to Ambient - 62.5 C/W θJA ©2009 1 FGPF30N45T Rev. A
