FGP40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGPF30N30 , 300V, 30A PDP IGBT
FGPF30N45T ,450V, 30A PDP Trench IGBTApplications• PDP SystemCGTO-220F11.Gate 2.Collector 3.EmitterEAbsolute Maximum RatingsSymbol ..
FGPF4536 ,360V PDP Trench IGBTGeneral Description®• High Current Capability Using novel trench IGBT technology, Fairchild ’s new ..
FGPF4536 ,360V PDP Trench IGBTApplications• PDP TV, Consumer appliances, LightingTO-220F G C E(Retractable)Absolute Maximum Rati ..
FGPF50N33BT ,330V PDP Trench IGBTApplications•PDP TVTO-220F G C EAbsolute Maximum RatingsSymbol Description Ratings UnitV Collector ..
FSB50550T ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FSB50550U ,Motion SPM?5 Seriesapplicationsand 3 half-bridge HVICs for FRFET gate driving. FSB50550U provides low electromagnetic ..
FSB50550US ,Motion SPM?5 SeriesApplicationsComposed of Six FRFET MOSFETs and Three Half-• HVIC for Gate Driving and Undervoltage P ..
FSB50550US ,Motion SPM?5 SeriesGeneral Description• 500 V R = 1.4 Ω(Max) FRFET MOSFET 3-Phase FSB50550US is an Advanced Motion SPM ..
FSB50825US ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FSB560 ,NPN Low Saturation TransistorFSB560/FSB560A FSB560 / FSB560AC EB TMSuperSOT -3 (SOT-23) NPN Lo ..
FGP40N6S2
600V, SMPS II Series N-Channel IGBT
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 July 2002 FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are100kHz Operation at 390V, 24A Low Gate Charge, Low Plateau Voltage SMPS II IGBTs 200kHZ Operation at 390V, 18A combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and ava- 600V Switching SOA Capability lanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. o Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125 C These devices are ideally suited for high voltage switched mode power supply applications where low conductionLow Gate Charge . . . . . . . . . 35nC at V = 15V GE loss, fast switching times and UIS capability are essential. Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical SMPS II LGC devices have been specially designed for: UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ • Power Factor Correction (PFC) circuits Full bridge topologies Low Conduction Loss Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT (co-pack) formerly Developmental Type TA49438 Package Symbol E C JEDEC JEDEC JEDEC C G E STYLE STYLE STYLE C G TO-247 TO-220AB TO-263AB G G N/C COLLECTOR E E (BOTTOM SIDE COLLECTOR COLLECTOR METAL) (FLANGE) (FLANGE) Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25°C 75 A C25 C I Collector Current Continuous, T = 110°C 35 A C110 C I Collector Current Pulsed (Note 1) 180 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 100A at 600V J E Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V 260 mJ AS CE DD P Power Dissipation Total T = 25°C 290 W D C Power Dissipation Derating T > 25°C 2.33 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2002 FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA4
