FGP30N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction loss, fast Low Gate Charge . . . . . . . . . 23nC at V = 15VGEs ..
FGP40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGPF30N30 , 300V, 30A PDP IGBT
FGPF30N45T ,450V, 30A PDP Trench IGBTApplications• PDP SystemCGTO-220F11.Gate 2.Collector 3.EmitterEAbsolute Maximum RatingsSymbol ..
FGPF4536 ,360V PDP Trench IGBTGeneral Description®• High Current Capability Using novel trench IGBT technology, Fairchild ’s new ..
FGPF4536 ,360V PDP Trench IGBTApplications• PDP TV, Consumer appliances, LightingTO-220F G C E(Retractable)Absolute Maximum Rati ..
FSB50450US ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FSB50550T ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FSB50550U ,Motion SPM?5 Seriesapplicationsand 3 half-bridge HVICs for FRFET gate driving. FSB50550U provides low electromagnetic ..
FSB50550US ,Motion SPM?5 SeriesApplicationsComposed of Six FRFET MOSFETs and Three Half-• HVIC for Gate Driving and Undervoltage P ..
FSB50550US ,Motion SPM?5 SeriesGeneral Description• 500 V R = 1.4 Ω(Max) FRFET MOSFET 3-Phase FSB50550US is an Advanced Motion SPM ..
FSB50825US ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FGP30N6S2
600V, SMPS II Series N-Channel IGBT
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 July 2001 FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low100kHz Operation at 390V, 14A Gate Charge, Low Plateau Voltage SMPS II IGBTs combin- 200kHZ Operation at 390V, 9A ing the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capa- 600V Switching SOA Capability bility (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These de- o Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 C vices are ideally suited for high voltage switched mode pow- er supply applications where low conduction loss, fastLow Gate Charge . . . . . . . . . 23nC at V = 15V GE switching times and UIS capability are essential. SMPS II Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical LGC devices have been specially designed for: UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ • Power Factor Correction (PFC) circuits Full bridge topologies Low Conduction Loss Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Formerly Developmental Type TA49367. Symbol Package JEDEC STYLE TO-247 JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB C E C E C G G C G G E E Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25°C 45 A C25 C I Collector Current Continuous, T = 110°C 20 A C110 C I Collector Current Pulsed (Note 1) 108 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 60A at 600V J E Pulsed Avalanche Energy, I = 20A, L = 1.3mH, V = 50V 150 mJ AS CE DD P Power Dissipation Total T = 25°C 167 W D C Power Dissipation Derating T > 25°C 1.33 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2001 FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A
