FGP20N60UFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGP30N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction loss, fast Low Gate Charge . . . . . . . . . 23nC at V = 15VGEs ..
FGP40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGPF30N30 , 300V, 30A PDP IGBT
FGPF30N45T ,450V, 30A PDP Trench IGBTApplications• PDP SystemCGTO-220F11.Gate 2.Collector 3.EmitterEAbsolute Maximum RatingsSymbol ..
FGPF4536 ,360V PDP Trench IGBTGeneral Description®• High Current Capability Using novel trench IGBT technology, Fairchild ’s new ..
FSB50450S ,Motion SPM?5 Series
FSB50450US ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FSB50550T ,Motion SPM?5 SeriesApplications• 3-Phase Inverter Driver for Small Power AC MotorRelated SourceDrives• AN9042 : Motion ..
FSB50550U ,Motion SPM?5 Seriesapplicationsand 3 half-bridge HVICs for FRFET gate driving. FSB50550U provides low electromagnetic ..
FSB50550US ,Motion SPM?5 SeriesApplicationsComposed of Six FRFET MOSFETs and Three Half-• HVIC for Gate Driving and Undervoltage P ..
FSB50550US ,Motion SPM?5 SeriesGeneral Description• 500 V R = 1.4 Ω(Max) FRFET MOSFET 3-Phase FSB50550US is an Advanced Motion SPM ..
FGP20N60UFD
600V, 20A, Field Stop IGBT
FGP20N60UFD 600 V, 20 A Field Stop IGBT March 2013 FGP20N60UFD 600 V, 20 A Field Stop IGBT Features General Description ® • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, • Low Saturation Voltage: V = 1.8 V @ I = 20 A CE(sat) C welder and PFC applications where low conduction and switch- • High Input Impedance ing losses are essential. • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C G TO-220 G C E E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current @ T = 25 C 40 A C I C o Collector Current @ T = 100 C 20 A C o I Pulsed Collector Current 60 A CM (1) @ T = 25 C C o Maximum Power Dissipation @ T = 25 C 165 W C P D o Maximum Power Dissipation @ T = 100 C 66 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.76 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 2.51 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA ©2011 1 FGP20N60UFD Rev. C0
