FGL60N100BNTD ,1000V, 60A NPT-Trench IGBTElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditio ..
FGP20N60UFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGP30N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction loss, fast Low Gate Charge . . . . . . . . . 23nC at V = 15VGEs ..
FGP40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGPF30N30 , 300V, 30A PDP IGBT
FGPF30N45T ,450V, 30A PDP Trench IGBTApplications• PDP SystemCGTO-220F11.Gate 2.Collector 3.EmitterEAbsolute Maximum RatingsSymbol ..
FSAV450 ,800MHz Quad SPDT LCD/Plasma Video SwitchApplicationsdifferential phases maintain the image integrity for video
FSAV450 ,800MHz Quad SPDT LCD/Plasma Video SwitchFeaturesFSAV450 is a 5V, high performance analog video switch
FGL60N100BNTD
1000V, 60A NPT-Trench IGBT
FGL60N100BNTD IGBT FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching technology show outstanding performance in conduction • Low Saturation Voltage : V = 2.5 V @ I = 60A CE(sat) C and switching characteristics as well as enhanced • High Input Impedance avalanche ruggedness. These devices are well suited for • Built-in Fast Recovery Diode Induction Heating ( I-H ) applications Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance C C G G TO-264 E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description FGL60N100BNTD Units V Collector-Emitter Voltage 1000 V CES V Gate-Emitter Voltage ± 25 V GES Collector Current @ T = 25°C60 A C I C Collector Current @ T = 100°C42 A C I Pulsed Collector Current 120 A CM (1) I Diode Continuous Forward Current @ T = 100°C15 A F C P Maximum Power Dissipation @ T = 25°C 180 W D C Maximum Power Dissipation @ T = 100°C72 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L Purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 25 °C/W θJA ©2004 FGL60N100BNTD Rev. A
