FGL40N120AND ,1200V NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and generalpurpose inverters.C CG GTO-26 ..
FGL40N120AND. ,1200V NPT IGBTFGL40N120AND 1200V NPT IGBTFebruary 2005FGL40N120AND1200V NPT IGBT
FGL40N120ANDTU ,1200V NPT IGBTFeatures Description• High speed switching Employing NPT technology, Fairchild’s AND series of IGBT ..
FGL40N150D ,IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGL60N100BNTD ,1000V, 60A NPT-Trench IGBTElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditio ..
FGP20N60UFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FSAV430BQX ,Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video Switchapplications.• RGB Video Switch in LCD, plasma and projection displaysDVD-RW Ordering Code:Order N ..
FSAV430MTC ,Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video SwitchFeaturesFSAV430 is a high performance Quad SPDT (2-to-1 multi-
FGL40N120AND-FGL40N120AND.-FGL40N120ANDTU
1200V NPT IGBT
FGL40N120AND 1200V NPT IGBT February 2005 FGL40N120AND 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series • Low saturation voltage : V = 2.6 V @ I = 40A CE(sat) C offers an solution for application such as induction heating (IH), • High input impedance motor control, general purpose inverters and uninterruptible power supplies (UPS). • CO-PAK, IGBT with FRD : t = 75ns (typ.) rr Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C C G G TO-264 E E GC E Absolute Maximum Ratings Symbol Parameter FGL40N120AND Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage ±25 V GES Collector Current @T = 25°C64 A C I C Collector Current @T = 100°C40 A C I Pulsed Collector Current 120 A CM(1) I Diode Continuous Forward Current @T = 100°C40 A F C I Diode Maximum Forward Current 240 A FM Maximum Power Dissipation @T = 25°C 500 W C P D Maximum Power Dissipation @T = 100°C 200 W C Short Circuit Withstand Time, SCWT 10 μs V = 600V, V = 15V, T = 125°C CE GE C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C STG Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 seconds Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 25 °C/W θJA ©2005 1 FGL40N120AND Rev. A
