FGK60N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FGL40N120AND ,1200V NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and generalpurpose inverters.C CG GTO-26 ..
FGL40N120AND. ,1200V NPT IGBTFGL40N120AND 1200V NPT IGBTFebruary 2005FGL40N120AND1200V NPT IGBT
FGL40N120ANDTU ,1200V NPT IGBTFeatures Description• High speed switching Employing NPT technology, Fairchild’s AND series of IGBT ..
FGL40N150D ,IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGL60N100BNTD ,1000V, 60A NPT-Trench IGBTElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditio ..
FSAV430 ,Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video SwitchFeaturesFSAV430 is a high performance Quad SPDT (2-to-1 multi-
FGK60N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
FGK60N6S2D June 2002 FGK60N6S2D TM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description Features The FGK60N6S2D is a Low Gate Charge, Low Plateau100kHz Operation at 390V, 52A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 31A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices 600V Switching SOA Capability shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high volt- o Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125 C age switched mode power supply applications where low conduction loss, fast switching times and UIS capability areLow Gate Charge . . . . . . . . 140nC at V = 15V GE essential. SMPS II LGC devices have been specially de- Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical signed for: UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ • Power Factor Correction (PFC) circuits Full bridge topologies Low Conduction Loss Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49346 Diode formerly Developmental Type TA49393 JEDEC STYLE STRETCH TO-247 Package Symbol E C C G G E Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25°C 75 A C25 C I Collector Current Continuous, T = 110°C 75 A C110 C I Collector Current Pulsed (Note 1) 320 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 200A at 600V J E Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V 700 mJ AS CE DD P Power Dissipation Total T = 25°C 625 W D C Power Dissipation Derating T > 25°C 5 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2002 FGK60N6S2D Rev. A1
