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FGH75T65UPD
650V, 75A Field Stop Trench IGBT
August 2012
FGH75T65UPD
650V, 75A Field Stop Trench IGBT
Features Maximum Junction Temperature : TJ = 175oC Positive Temperaure Co-efficient for easy parallel operating High current capability Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A High input impedance Tightened Parameter Distribution RoHS compliant Short Circuit Ruggedness > 5us @25oC
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum perfor-
mance for Solar Inverter , UPS and Digital Power Generator
where low conduction and switching losses are essential.
Applications Solar Inverter, UPS, Digital Power Generator
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 650 V
VGES Gate to Emitter Voltage ± 20 V Collector Current @ TC = 25oC 150 A
Collector Current @ TC = 100oC 75 A
ICM (1) Pulsed Collector Current 225 A Diode Forward Current @ TC = 25oC 75 A
Diode Forward Current @ TC = 100oC 50 A
IFM(1) Pulsed Diode Maximum Forward Current 225 A Maximum Power Dissipation @ TC = 25oC 375 W
Maximum Power Dissipation @ TC = 100oC 187 W
SCWT Short Circuit Withstand Time @ TC = 25oC 5 us
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.40 o C/W
RθJC(Diode) Thermal Resistance, Junction to Case - 0.86 o C/W
RθJA Thermal Resistance, Junction to Ambient - 40 o C/WE
COLLECTOR
(FLANGE)
