FGH50N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FGH60N60SF ,600V, 60A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCECCGGCOLLECTORE(FLANGE)Absolute Maximum RatingsSymbol ..
FGH60N60SFD ,600V, 60A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCCECGGCOLLECTORE(FLANGE)Absolute Maximum RatingsSymbol ..
FGH60N60SFD ,600V, 60A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH60N60UFD ,600V, 60A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH75T65UPD ,650V, 75A Field Stop Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FSAV331 ,Low On Resistance Dual 4:1 Multiplexer/Demultiplexer Wide Bandwidth Video SwitchApplications• Y/C video or CVBS video switch in LCD, plasma, andprojector displays Ordering Code: O ..
FSAV331MTC ,Low On Resistance Dual 4:1 Multiplexer/Demultiplexer Wide Bandwidth Video SwitchFSAV331 Dual 4:1 Wide Bandwidth Video SwitchApril 2004Revised May 2004FSAV331Dual 4:1 Wide Bandwidt ..
FSAV331MTCX ,Low On Resistance Dual 4:1 Multiplexer/Demultiplexer Wide Bandwidth Video SwitchFeaturesThe Fairchild video switch FSAV331 is a dual 4:1 high
FGH50N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
FGH50N6S2D July 2002 FGH50N6S2D TM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices 600V Switching SOA Capability shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high volt- o Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 C age switched mode power supply applications where low conduction loss, fast switching times and UIS capability areLow Gate Charge . . . . . . . . . 70nC at V = 15V GE essential. SMPS II LGC devices have been specially de- Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical signed for: UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ • Power Factor Correction (PFC) circuits Full bridge topologies Low Conduction Loss Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT (co-pack) formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 JEDEC STYLE TO-247 Package Symbol E C C G G E Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25°C 75 A C25 C I Collector Current Continuous, T = 110°C 60 A C110 C I Collector Current Pulsed (Note 1) 240 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 150A at 600V J E Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V 480 mJ AS CE DD P Power Dissipation Total T = 25°C 463 W D C Power Dissipation Derating T > 25°C 3.7 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2002 FGH50N6S2D RevA2
