FGH50N3 ,300V, PT N-Channel IGBT, TO-247 Packageapplications operating at high frequencies where low50A conduction losses are essential. This devic ..
FGH50N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FGH50N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FGH60N60SF ,600V, 60A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCECCGGCOLLECTORE(FLANGE)Absolute Maximum RatingsSymbol ..
FGH60N60SFD ,600V, 60A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCCECGGCOLLECTORE(FLANGE)Absolute Maximum RatingsSymbol ..
FGH60N60SFD ,600V, 60A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FSAV330QSCX ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsMin Typ Max(V)(N ..
FSAV330QSCX ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFeaturesThe Fairchild Video Switch FSAV330 is a quad single pole/
FGH50N3
300V, PT N-Channel IGBT, TO-247 Package
FGH50N3 July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching •Low V . . . . . . . . . . . . . . . . . . . < 1.4V max CE(SAT) device combining the best features of MOSFETs and Low E . . . . . . . . . . . . . . . . . . . . . . . . . < 200μJ bipolar transistors. These devices have the high input OFF impedance of a MOSFET and the low on-state conduction SCWT (@ T = 125°C). . . . . . . . . . . . . . . . . > 8μs J loss of a bipolar transistor. The much lower on-state voltage o o drop varies only moderately between 25 C and 150 C. 300V Switching SOA Capability This IGBT is ideal for many high voltage switching Positive V Temperature Coefficient above CE(SAT) applications operating at high frequencies where low 50A conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485 Package Symbol E C C G TO-247 G COLLECTOR (FLANGE) E Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 300 V CES I Collector Current Continuous, T = 25°C 75 A C25 C I Collector Current Continuous, T = 110°C 75 A C110 C I Collector Current Pulsed (Note 1) 240 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 150A at 300V J E Single Pulse Avalanche Energy, I = 30A, L = 1.78mH, V = 50V 800 mJ AS CE DD E Single Pulse Reverse Avalanche Energy, I = 30A, L = 1.78mH, V = 50V 800 mJ ARV EC DD P Power Dissipation Total T = 25°C 463 W D C Power Dissipation Derating T > 25°C 3.7 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG t Short Circuit Withstand Time (Note 2) 8 μs SC CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. 2. V = 180V, T = 125°C, V = 12Vdc, R = 5Ω CE(PK) J GE G ©2002 FGH50N3 Rev. A
