FGH40N60SMDF ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60UF ,600V, 40A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCECGCOLLECTOR(FLANGE)Absolute Maximum RatingsSymbol De ..
FGH40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGH50N3 ,300V, PT N-Channel IGBT, TO-247 Packageapplications operating at high frequencies where low50A conduction losses are essential. This devic ..
FGH50N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FGH50N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FSAV330QSC ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFeaturesThe Fairchild Video Switch FSAV330 is a quad single pole/
FGH40N60SMDF
600V, 40A, Field Stop IGBT
FGH40N60SMDF 600 V, 40 A Field Stop IGBT April 2013 FGH40N60SMDF 600 V, 40 A Field Stop IGBT Features Applications • Maximum Junction Temperature : T = 175°C • Solar Inverter, UPS, Welder, PFC, Telecom, ESS J • Positive Temperaure Co-efficient for Easy Parallel Operating General Description • High Current Capability • Low Saturation Voltage: V = 1.9V(Typ.) @ I = 40 A Using Novel Field Stop IGBT Technology, Fairchild’s new series CE(sat) C nd of field stop 2 generation IGBTs offer the optimum perfor- • High Input Impedance mance for solar inverter, UPS, welder, telecom, ESS and PFC • Fast Switching: E = 6.5 uJ/A OFF applications where low conduction and switching losses are • Tightened Parameter Distribution essential. •RoHS Compliant E C C G G COLLECTOR E (FLANGE) Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current @ T = 25C80 A C I C o Collector Current @ T = 100C40 A C o I Pulsed Collector Current 120 A CM (1) @ T = 25 C C o Maximum Power Dissipation @ T = 25C349 W C P D o Maximum Power Dissipation @ T = 100C174 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.43 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 1.45 C/W JC o R Thermal Resistance, Junction to Ambient - 40 C/W JA ©2010 1 FGH40N60SMDF Rev. C0
