FGH40N60SFD ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60SFDTU , 600 V, 40 A Field Stop IGBT
FGH40N60SMDF ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60UF ,600V, 40A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCECGCOLLECTOR(FLANGE)Absolute Maximum RatingsSymbol De ..
FGH40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGH50N3 ,300V, PT N-Channel IGBT, TO-247 Packageapplications operating at high frequencies where low50A conduction losses are essential. This devic ..
FSAV330MX ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFSAV330 Low On Resistance Quad SPDT Wide Bandwidth Video SwitchApril 2002Revised October 2002FSAV33 ..
FSAV330MX ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFSAV330 Low On Resistance Quad SPDT Wide Bandwidth Video SwitchApril 2002Revised October 2002FSAV33 ..
FSAV330QSC ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFSAV330 Low On Resistance Quad SPDT Wide Bandwidth Video SwitchApril 2002Revised October 2002FSAV33 ..
FSAV330QSC ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFeaturesThe Fairchild Video Switch FSAV330 is a quad single pole/
FGH40N60SFD
600V, 40A, Field Stop IGBT
FGH40N60SFD 600 V, 40 A Field Stop IGBT April 2013 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description ® • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, • Low Saturation Voltage: V = 2.3 V @ I = 40 A CE(sat) C welder, microwave oven, telecom, ESS and PFC applications • High Input Impedance where low conduction and switching losses are essential. • Fast Switching •RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele- com, ESS C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current @ T = 25C80 A C I C o Collector Current @ T = 100C40 A C o I Pulsed Collector Current 120 A CM (1) @ T = 25 C C o Maximum Power Dissipation @ T = 25C290 W C P D o Maximum Power Dissipation @ T = 100C116 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.43 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 1.45 C/W JC o R Thermal Resistance, Junction to Ambient - 40 C/W JA ©2008 1 FGH40N60SFD Rev.C0
