FGB30N6S2DT ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diodeapplications where low conduction Low Gate Charge . . . . . . . . . 23nC at V = 15VGEloss, fast s ..
FGH40N120AN ,1200V NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and generalpurpose inverters.ECCGGCOLLEC ..
FGH40N60SFD ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60SFDTU , 600 V, 40 A Field Stop IGBT
FGH40N60SMDF ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60UF ,600V, 40A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCECGCOLLECTOR(FLANGE)Absolute Maximum RatingsSymbol De ..
FSAM20SL60 ,SPM TM (Smart Power Module)FeaturesFSAM20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchild ..
FSAM30SM60A ,30A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..
FSAU3157P6X ,TinyLogic Low Voltage UHS SPDT Analog Switch with -2V Undershoot ProtectionFeaturesThe NC7SBU3157 or FSAU3157 is a high performance,
FGB30N6S2DT
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D July 2001 FGH30N6S2D / FGP30N6S2D / FGB30N6S2D TM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are100kHz Operation at 390V, 14A Low Gate Charge, Low Plateau Voltage SMPS II IGBTs 200kHZ Operation at 390V, 9A combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and ava- 600V Switching SOA Capability lanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. o Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 C These devices are ideally suited for high voltage switched mode power supply applications where low conductionLow Gate Charge . . . . . . . . . 23nC at V = 15V GE loss, fast switching times and UIS capability are essential. Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical SMPS II LGC devices have been specially designed for: UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ • Power Factor Correction (PFC) circuits Full bridge topologies Low Conduction Loss Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390 Package Symbol C E JEDEC STYLE TO-247 JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB C E G C G G C G E E Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25°C 45 A C25 C I Collector Current Continuous, T = 110°C 20 A C110 C I Collector Current Pulsed (Note 1) 108 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 60A at 600V J E Pulsed Avalanche Energy, I = 12A, L = 2mH, V = 50V 150 mJ AS CE DD P Power Dissipation Total T = 25°C 167 W D C Power Dissipation Derating T > 25°C 1.33 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2001 FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
