FGB20N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FGB20N6S2T ,600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Packageapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FGB3040CS , EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FGB3040CS , EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FGB30N6S2DT ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diodeapplications where low conduction Low Gate Charge . . . . . . . . . 23nC at V = 15VGEloss, fast s ..
FGH40N120AN ,1200V NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and generalpurpose inverters.ECCGGCOLLEC ..
FSAM15SH60A ,15A, Smart Power Module (SPM)FeaturesFSAM15SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchil ..
FSAM15SL60 ,SPM TM (Smart Power Module)applicationscircuit protection and drive matched to low-loss IGBTs.• Single-grounded power supply d ..
FSAM15SL60 ,SPM TM (Smart Power Module)FeaturesFSAM15SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchild ..
FSAM15SM60A ,15A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..
FSAM20SL60 ,SPM TM (Smart Power Module)FeaturesFSAM20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchild ..
FSAM30SM60A ,30A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..
FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D July 2002 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D TM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description Features The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low100kHz Operation at 390V, 7A Gate Charge, Low Plateau Voltage SMPS II IGBTs 200kHZ Operation at 390V, 5A combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high 600V Switching SOA Capability avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate o Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125 C drive. These devices are ideally suited for high voltage switched mode power supply applications where lowLow Gate Charge . . . . . . . . . 30nC at V = 15V GE conduction loss, fast switching times and UIS capability are Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical essential. SMPS II LGC devices have been specially designed for: UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ • Power Factor Correction (PFC) circuits Low Conduction Loss Full bridge topologies Half bridge topologies Low E on Push-Pull circuits Uninterruptible power suppliesSoft Recovery Diode Zero voltage and zero current switching circuits IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469) Package Symbol C TO-247 E C E TO-220AB G C G TO-263AB G G E E COLLECTOR (FLANGE) Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25°C 28 A C25 C I Collector Current Continuous, T = 110°C 13 A C110 C I Collector Current Pulsed (Note 1) 40 A CM V Gate to Emitter Voltage Continuous ±20 V GES V Gate to Emitter Voltage Pulsed ±30 V GEM SSOA Switching Safe Operating Area at T = 150°C, Figure 2 35A at 600V A J E Pulsed Avalanche Energy, I = 7.0A, L = 4mH, V = 50V 100 mJ AS CE DD P Power Dissipation Total T = 25°C 125 W D C Power Dissipation Derating T > 25°C 1.0 W/°C C T Operating Junction Temperature Range -55 to 150 °C J T Storage Junction Temperature Range -55 to 150 °C STG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2002 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
