FGAF40N60UFD ,Ultrafast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGB20N60SFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGB20N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FGB20N6S2T ,600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Packageapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FGB3040CS , EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FGB3040CS , EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FSAM10SH60A ,10A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..
FSAM15SH60 ,SPM TM (Smart Power Module)applicationsoptimized circuit protection and drive matched to low-loss• Single-grounded power suppl ..
FSAM15SH60A ,15A, Smart Power Module (SPM)FeaturesFSAM15SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchil ..
FSAM15SL60 ,SPM TM (Smart Power Module)applicationscircuit protection and drive matched to low-loss IGBTs.• Single-grounded power supply d ..
FSAM15SL60 ,SPM TM (Smart Power Module)FeaturesFSAM15SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchild ..
FSAM15SM60A ,15A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..
FGAF40N60UFD
Ultrafast IGBT
FGAF40N60UFD IGBT FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V = 2.3 V @ I = 20A CE(sat) C The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : t = 50ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G TO-3PF E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description FGAF40N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C40 A C I C Collector Current @ T = 100°C20 A C I Pulsed Collector Current 160 A CM (1) I Diode Continuous Forward Current @ T = 100°C15 A F C I Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation @ T = 25°C 100 W D C Maximum Power Dissipation @ T = 100°C40 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 1.2 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2004 FGAF40N60UFD Rev. A
