FGA50N100BNTD ,1000V, NPT Trench IGBTapplications.ApplicationUPS, Welder, Induction Heating, Microwave OvenC CG GTO-3PG C EE EAbsolute ..
FGAF40N60UF ,Ultrafast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
FGAF40N60UFD ,Ultrafast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGB20N60SFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGB20N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FGB20N6S2T ,600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Packageapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FSAL200QSC ,Wide Bandwidth Quad 2:1 Analog Multiplexer/Demultiplexer SwitchFeaturesThe Fairchild Switch FSAL200 is a rail-to-rail quad 2:1
FGA50N100BNTD
1000V, NPT Trench IGBT
FGA50N100BNTD 1000 V NPT Trench IGBT April 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features ® Using Fairchild 's proprietary trench design and advanced • High Speed Switching NPT technology, the 1000V NPT IGBT offers superior • Low Saturation Voltage : V = 2.5 V @ I = 60 A CE(sat) C conduction and switching performances, high avalanche • High Input Impedance ruggedness and easy parallel operation. This device offers • Built-in Fast Recovery Diode the optimum performance for hard switching application such as UPS, welder applications. Application UPS, Welder, Induction Heating, Microwave Oven C C G G TO-3P G C E E E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGA50N100BNTD Unit V Collector-Emitter Voltage 1000 V CES V Gate-Emitter Voltage 25 V GES Collector Current @ T = 25C 50 A C I C Collector Current @ T = 100C 35 A C I Pulsed Collector Current 100 A CM (1) I Diode Continuous Forward Current @ T = 100C 15 A F C P Maximum Power Dissipation @ T = 25C 156 W D C Maximum Power Dissipation @ T = 100C 63 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering T 300 C L Purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction-to-Case -- 0.8 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.4 C/W JC R Thermal Resistance, Junction-to-Ambient -- 25 C/W JA ©2006 1 FGA50N100BNTD Rev. C2
