FGA25N120ANTD ,1200V NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA25N120ANTDTU ,1200V, 25A, NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA50N100BNTD ,1000V, NPT Trench IGBTapplications.ApplicationUPS, Welder, Induction Heating, Microwave OvenC CG GTO-3PG C EE EAbsolute ..
FGAF40N60UF ,Ultrafast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
FGAF40N60UFD ,Ultrafast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGB20N60SFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FSAL200 ,Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchFSAL200 Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchJanuary 2002Revised August 2002 ..
FSAL200QSC ,Wide Bandwidth Quad 2:1 Analog Multiplexer/Demultiplexer SwitchFeaturesThe Fairchild Switch FSAL200 is a rail-to-rail quad 2:1
FGA25N120ANTD
1200V NPT Trench IGBT
FGA25N120ANTD 1200V NPT Trench IGBT August 2005 FGA25N120ANTD 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction • Low saturation voltage: V = 2.0V CE(sat), typ and switching performances, high avalanche ruggedness and @ I = 25A and T = 25°C C C easy parallel operation. • Low switching loss: E = 0.96mJ off, typ This device is well suited for the resonant or soft switching @ I = 25A and T = 25°C C C application such as induction heating, microwave oven, etc. • Extremely enhanced avalanche capability C C G G TO-3P E E G C E Absolute Maximum Ratings Symbol Description FGA25N120ANTD Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage ± 20 V GES I Collector Current @ T = 25°C50 A C C Collector Current @ T = 100°C25 A C I Pulsed Collector Current (Note 1) 75 A CM I Diode Continuous Forward Current @ T = 100°C25 A F C I Diode Maximum Forward Current 150 A FM P Maximum Power Dissipation @ T = 25°C 312 W D C Maximum Power Dissipation @ T = 100°C 125 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg T Maximum Lead Temp. for soldering 300 °C L Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case for IGBT -- 0.4 °C/W θJC R Thermal Resistance, Junction-to-Case for Diode -- 2.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2005 1 FGA25N120ANTD Rev. B
