FGA20S120M ,1200V, 20A, Shorted-anode IGBTApplications• Induction Heating, Microwave OvenCGTO-3PNEG C EAbsolute Maximum Ratings T = 25°C unle ..
FGA25N120AN ,Discrete, NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and general purpose inverters.C CG GE ET ..
FGA25N120ANTD ,1200V NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA25N120ANTDTU ,1200V, 25A, NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA50N100BNTD ,1000V, NPT Trench IGBTapplications.ApplicationUPS, Welder, Induction Heating, Microwave OvenC CG GTO-3PG C EE EAbsolute ..
FGAF40N60UF ,Ultrafast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
FSAL200 ,Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchFSAL200 Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchJanuary 2002Revised August 2002 ..
FSAL200QSC ,Wide Bandwidth Quad 2:1 Analog Multiplexer/Demultiplexer SwitchFeaturesThe Fairchild Switch FSAL200 is a rail-to-rail quad 2:1
FGA20S120M
1200V, 20A, Shorted-anode IGBT
March 2013
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Notes:
1: Limited by Tjmax
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage ±25 V Collector Current @ TC = 25oC 40 A
Collector Current @ TC = 100oC 20 A
ICM (1) Pulsed Collector Current 60 A Diode Continuous Forward Current @ TC = 25oC 40 A Diode Continuous Forward Current @ TC = 100oC 20 A Maximum Power Dissipation @ TC = 25oC 348 W
Maximum Power Dissipation @ TC = 100oC 174 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.43 o C/W
RθJC(Diode) Thermal Resistance, Junction to Case -- 0.43 o C/W
RθJA Thermal Resistance, Junction to Ambient -- 40 o C/WCE TO-3PN
FGA20S120M
1200 V , 20 A Shorted-anode IGBT
Features High Speed Switching Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 20 A High Input Impedance RoHS Compliant
Applications Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild® ’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
