FGA20N120FTD ,1200V, 20A, Field Stop Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA20S120M ,1200V, 20A, Shorted-anode IGBTApplications• Induction Heating, Microwave OvenCGTO-3PNEG C EAbsolute Maximum Ratings T = 25°C unle ..
FGA25N120AN ,Discrete, NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and general purpose inverters.C CG GE ET ..
FGA25N120ANTD ,1200V NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA25N120ANTDTU ,1200V, 25A, NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA50N100BNTD ,1000V, NPT Trench IGBTapplications.ApplicationUPS, Welder, Induction Heating, Microwave OvenC CG GTO-3PG C EE EAbsolute ..
FSAL200 ,Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchFSAL200 Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchJanuary 2002Revised August 2002 ..
FSAL200QSC ,Wide Bandwidth Quad 2:1 Analog Multiplexer/Demultiplexer SwitchFeaturesThe Fairchild Switch FSAL200 is a rail-to-rail quad 2:1
FGA20N120FTD
1200V, 20A, Field Stop Trench IGBT
FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT April 2013 FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description ® • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching • High Speed Switching performances for soft switching applications. The device can • Low Saturation Voltage: V = 1.6 V @ I = 20 A CE(sat) C operate in parallel configuration with exceptional avalanche rug- • High Input Impedance gedness. This device is designed for induction heating and •RoHS Compliant microwave oven. Applications • Induction heating, Microvewave oven C G TO-3PN G E C E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 1200 V CES V Gate to Emitter Voltage 25 V GES o Continuous Collector Current @ T = 25 C 40 A C I C o Continuous Collector Current @ T = 100 C 20 A C I Pulsed Collector Current 60 A CM (1) o 20 A I Diode Continuous Forward Current @ T = 25 C F C o Maximum Power Dissipation @ T = 25 C 298 W C P D o Maximum Power Dissipation @ T = 100 C 119 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating, Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.42 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 2.0 C/W JC o R Thermal Resistance, Junction to Ambient - 40 C/W JA ©2008 1 FGA20N120FTD Rev. C0
