FFPF60SA60DS ,8A, 600V Stealth Dual Series DiodeApplications• Switch Mode Power Supplies• Hard Swithed PFC Boost Diode• UPS Free wheeling Diode• Mo ..
FGA15N120ANTDTU ,1200V, 15A, NPT Trench IGBTFeatures Description®• NPT Trench Technology, Positive temperature coefficient Using Fairchild 's p ..
FGA180N33ATDTU , 330 V PDP Trench IGBT
FGA180N33ATDTU , 330 V PDP Trench IGBT
FGA20N120FTD ,1200V, 20A, Field Stop Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA20S120M ,1200V, 20A, Shorted-anode IGBTApplications• Induction Heating, Microwave OvenCGTO-3PNEG C EAbsolute Maximum Ratings T = 25°C unle ..
FSA3157P6X ,TinyLogic Low Voltage UHS SPDT Analog Switch or 2:1 Multiplexer/Demultiplexer Bus SwitchNC7SB3157 • FSA3157 TinyLogic Low Voltage UHS SPDT Analog Switch or 2:1 Multiplexer/Demultiplexer ..
FSA3157P6X_NL ,TinyLogic Low Voltage UHS SPDT Analog Switch or 2:1 Multiplexer/Demultiplexer Bus Switchapplicationsgle-pole/double-throw (SPDT) Analog Switch or 2:1 Multi-
FFPF60SA60DS
8A, 600V Stealth Dual Series Diode
FFPF60SA60DS TM Stealth Rectifier FFPF60SA60DS Features • Soft Recovery (t / t > 1.2) b a • Fast Recovery (t < 25ns) rr • Reverse Voltage, 600V • Forward Voltage (@ T = 125°C), < 2.0 V C • Enhanced Avalanche Energy TO-220F-3L 1 2 3 1 2 3 Applications • Switch Mode Power Supplies • Hard Swithed PFC Boost Diode • UPS Free wheeling Diode • Motor Drive FWD •SMPS FWD • Snubber Diode Absolute Maximum Ratings (per leg) T =25°C unless otherwise noted C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current @ T = 95 °C8 A F(AV) C I Non-repetitive Peak Surge Current 80 A FSM 60Hz Single Half-Sine Wave P Power Dissipation 26 W D W Avalanche Energy (1A, 40mH) 20 mJ AVL T T Operating Junction and Storage Temperature - 65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 3.125 °C/W θJC R Maximum Thermal Resistance, Junction to Ambient 62.5 °C/W θJA ©2004 Rev. A, October 2004
