FFPF10U20DNTU ,10A/200V Ultra Fast Recovery RectifierApplications Power switching circuitsTO-220F Output rectifiers1 2 3 Freewheeling diodes ..
FFPF10U20DP ,FAST RECOVERY POWER RECTIFIER
FFPF10U20S ,ULTRA FAST RECOVERY POWER RECTIFIERApplications Power switching circuitsTO-220F Output rectifiers1 2 Freewheeling diodes ..
FFPF10U20S ,ULTRA FAST RECOVERY POWER RECTIFIERFeatures• Ultrafast with soft recovery Low forward voltage
FFPF10U30DN ,ULTRA FAST RECOVERY POWER RECTIFIERApplications• Power switching circuitsTO-220F• Output rectifiers1 2 3• Freewheeling diodes• ..
FFPF10U40STU ,10A/400V Ultra Fast Recovery RectifiersApplications Power switching circuitsT TO O- -2 220F 20F Output rectifiers1 1 ..
FSA266K8X ,Low Voltage UHS Dual SPST Normally Open Analog Switch or 2-Bit Bus Switchapplicationsdual single-pole/single-throw (SPST) analog switch or 2-bit
FFPF10U20DNTU
10A/200V Ultra Fast Recovery Rectifier
FFPF10U20DN FFPF10U20DN Features • Ultrafast with soft recovery Low forward voltage Applications Power switching circuits TO-220F Output rectifiers 1 2 3 Freewheeling diodes Switching mode power supply 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current @ T = 100°C10 A F(AV) C I Non-repetitive Peak Surge Current 100 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 5.0 °C/W θJC Electrical Characteristics (per diode) T =25 ° °C unless otherwise noted ° ° C Symbol Parameter Min. Typ. Max. Units V Maximum Instantaneous Forward Voltage V FM * I = 10A T = 25 °C - - 1.2 F C I = 10A T = 100 °C - - 1.0 F C I Maximum Instantaneous Reverse Current μA RM * @ rated V T = 25 °C - - 10 R C T = 100 °C - - 100 C t Maximum Reverse Recovery Time - - 35 ns rr I Maximum Reverse Recovery Current - - 2.5 A rr Q Maximum Reverse Recovery Charge - - 45 nC rr (I =10A, di/dt = 200A/μs) F W Avalanche Energy 0.5 - - mJ AVL * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000
