FFPF06F150S ,DAMPER DIODEFeatures• High voltage and high reliability High speed switching Low forward voltageTO-220F
FFPF06F150S ,DAMPER DIODEApplications1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode ..
FFPF06F150STU ,6A/1500V Damper DiodeApplications1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode ..
FFPF06U150S ,DAMPER DIODEFeatures• High voltage and high reliability High speed switching Low forward voltageTO-220F
FFPF06U150S ,DAMPER DIODEApplications1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode ..
FFPF06U150STU ,6A/1500V Damper DiodeApplications1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode ..
FSA2567 ,Low Power, Dual SIM Card Analog Switchfeatures a low on capacitance (C ) of ON10pF to ensure high-speed data transfer. The V - 15μA Maxim ..
FSA2567MPX , Low-Power, Dual SIM Card Analog Switch
FSA2567MPX , Low-Power, Dual SIM Card Analog Switch
FSA266K8X ,Low Voltage UHS Dual SPST Normally Open Analog Switch or 2-Bit Bus SwitchFeaturesThe FSA266 or NC7WB66 is an ultra high-speed (UHS)
FFPF06F150S
DAMPER DIODE
FFPF06F150S FFPF06F150S Features • High voltage and high reliability High speed switching Low forward voltage TO-220F Applications 1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 1500 V RRM I Average Rectified Forward Current @ T = 125°C6 A F(AV) C I Non-repetitive Peak Surge Current 60 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 4.0 °C/W θJC Electrical Characteristics T =25 ° °C unless otherwise noted ° ° C Symbol Parameter Min. Typ. Max. Units V Maximum Instantaneous Forward Voltage V FM * I = 6A T = 25 °C - - 1.6 F C I = 6A T = 125 °C - - 1.4 F C I Maximum Instantaneous Reverse Current μA RM * @ rated V T = 25 °C - - 7 R C T = 125 °C - - 60 C t Maximum Reverse Recovery Time -- 170 ns rr (I =1A, di/dt = 50A/μs) F t Maximum Forward Recovery Time -- 350 ns fr (I =6.5A, di/dt = 50A/μs) F V Maximum Forward Recovery Voltage - - 17 V FRM * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000
