FFP20U60DNTU ,20A/600V Ultra Fast Recovery RectifierFeatures• High voltage and high reliability• High speed switching• Low forward voltage
FFP20UP20DN ,Ultrafast Recovery Power RectifierApplications• Output Rectifiers• Switching Mode Power Supply• Free-wheeling diode for motor applica ..
FFP30S60STU , STEALTH II Rectifier
FFP30UP20DNTU , Ultrafast Recovery Power Rectifier
FFPF04F150S ,DAMPER DIODEApplications1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode ..
FFPF04F150STU ,4A/1500V Damper DiodeApplications1 2 Suitable for damper diode in horizontal deflection circuits 1. Cathode ..
FSA2567 ,Low Power, Dual SIM Card Analog Switchfeatures a low on capacitance (C ) of ON10pF to ensure high-speed data transfer. The V - 15μA Maxim ..
FSA2567MPX , Low-Power, Dual SIM Card Analog Switch
FSA2567MPX , Low-Power, Dual SIM Card Analog Switch
FSA266K8X ,Low Voltage UHS Dual SPST Normally Open Analog Switch or 2-Bit Bus SwitchFeaturesThe FSA266 or NC7WB66 is an ultra high-speed (UHS)
FFP20U60DNTU
20A/600V Ultra Fast Recovery Rectifier
FFP20U60DN FFP20U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • General purpose TO-220 • Switching mode power supply 1 2 3 • Free-wheeling diode for motor application • Power switching circuits 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 600 V RRM I Average Rectified Forward Current @ T = 100°C20 A F(AV) C I Non-repetitive Peak Surge Current 120 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 1.25 °C/W θJC Electrical Characteristics (per diode) T =25 ° °C unless otherwise noted ° ° C Symbol Parameter Min. Typ. Max. Units V Maximum Instantaneous Forward Voltage V FM * I = 20A T = 25 °C 2.2 F C I = 20A T = 100 °C 2.0 F C I Maximum Instantaneous Reverse Current μA RM * @ rated V T = 25 °C 10 R C T = 100 °C 100 C t Maximum Reverse Recovery Time 90 ns rr I Maximum Reverse Recovery Current 8 A rr Q Maximum Reverse Recovery Charge 360 nC rr (I =20A, di/dt = 200A/μs) F W Avalanche Energy 1.0 mJ AVL * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000
