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FFB5551 from FAIRCHIL,Fairchild Semiconductor

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FFB5551

Manufacturer: FAIRCHIL

NPN Multi-Chip General Purpose Amplifier

Partnumber Manufacturer Quantity Availability
FFB5551 FAIRCHIL 18000 In Stock

Description and Introduction

NPN Multi-Chip General Purpose Amplifier The part **FFB5551** is manufactured by **FAIRCHILD** (Fairchild Semiconductor).  

Here are its key specifications:  

- **Type**: NPN Bipolar Junction Transistor (BJT)  
- **Package**: TO-92  
- **Collector-Emitter Voltage (VCE)**: 160V  
- **Collector-Base Voltage (VCB)**: 160V  
- **Emitter-Base Voltage (VEB)**: 5V  
- **Collector Current (IC)**: 600mA  
- **Power Dissipation (PD)**: 625mW  
- **DC Current Gain (hFE)**: 30–150  
- **Transition Frequency (fT)**: 50MHz  
- **Operating Temperature Range**: -55°C to +150°C  

This transistor is commonly used in switching and amplification applications.  

(Note: Always verify datasheets for exact specifications, as variations may exist.)

Partnumber Manufacturer Quantity Availability
FFB5551 FAIRCHILD 10948 In Stock

Description and Introduction

NPN Multi-Chip General Purpose Amplifier The part FFB5551 is manufactured by FAIRCHILD. Below are its specifications:

- **Type**: NPN Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCE)**: 160V  
- **Collector-Base Voltage (VCB)**: 160V  
- **Emitter-Base Voltage (VEB)**: 5V  
- **Collector Current (IC)**: 600mA  
- **Power Dissipation (PD)**: 625mW  
- **DC Current Gain (hFE)**: 30-300  
- **Transition Frequency (fT)**: 100MHz  
- **Operating Temperature Range**: -55°C to +150°C  
- **Package**: TO-92  

These are the key specifications for the FFB5551 transistor from FAIRCHILD.

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