FFB5551 ,NPN Multi-Chip General Purpose AmplifierFFB5551FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purp ..
FFB5551 ,NPN Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations
FFH15S60STU , Stealth 2 Rectifier
FFH30US30DN ,30A, 300V Stealth DiodeApplicationsFormerly developmental type TA49449. Switch Mode Power Supplies Power Factor Correcti ..
FFH50US60S ,50A, 600V Stealth DiodeApplicationsFormerly developmental type TA49468. Switch Mode Power Supplies Power Factor Correcti ..
FFH60UP40S3 , 60A, 400V UItrafast Rectifier
FSA1156L6X ,Low RON Low Voltage SPST Analog SwitchFeaturesThe FSA1156 and FSA1157 are high performance Single
FFB5551
NPN Multi-Chip General Purpose Amplifier
FFB5551 FFB5551 E2 B2 Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purpose high voltage amplifiers. C1 E1 is Pin 1. C2 B1 E1 SC70-6 Mark: .P1 Absolute Maximum Ratings* T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 160 V CEO V Collector-Base Voltage 180 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 200 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 160 V (BR)CEO C B V Collector-Base BreakdownVoltage I = 100µA, I = 0 180 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10µA, I = 0 6.0 V (BR)EBO E C I Collector Cut-off Current V = 120V, I = 0 50 nA CBO CB E V = 120V, I = 0, T = 100°C 50 µA CB E A I Emitter Cut-off Current V = 4.0V, I = 0 50 nA EBO EB C On Characteristics * h DC Current Gain V = 5.0V, I = 1.0mA 80 FE CE C V = 5.0V, I = 10mA 80 250 CE C V = 5.0V, I = 50mA 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.15 V CE C B I = 50mA, I = 5.0mA 0.20 C B V (sat) Base-Emitter Saturation Voltage I = 10mA, I = 1.0mA 1.0 V BE C B I = 50mA, I = 5.0mA 1.0 C B Small Signal Characteristics f Current gain Bandwidth Product V = 10V, I = 10mA 100 300 MHz T CE C f = 100MHz C Output Capacitance V = 10V, I = 0, f = 1.0MHz 6.0 pF obo CB E * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2003 Rev. A, June 2003
