FFB3946 ,NPN & PNP General Purpose AmplifierFFB3946 / FMB3946FFB3946 FMB3946E2C2B2 TRANSISTOR TYPEE1C1C1 B1 E1 NPNC1C2 B2 E2 ..
FFB5551 ,NPN Multi-Chip General Purpose AmplifierFFB5551FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purp ..
FFB5551 ,NPN Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations
FFH15S60STU , Stealth 2 Rectifier
FFH30US30DN ,30A, 300V Stealth DiodeApplicationsFormerly developmental type TA49449. Switch Mode Power Supplies Power Factor Correcti ..
FFH50US60S ,50A, 600V Stealth DiodeApplicationsFormerly developmental type TA49468. Switch Mode Power Supplies Power Factor Correcti ..
FSA1156L6X ,Low RON Low Voltage SPST Analog SwitchFeaturesThe FSA1156 and FSA1157 are high performance Single
FFB3946
NPN & PNP General Purpose Amplifier
FFB3946 / FMB3946 FFB3946 FMB3946 E2 C2 B2 TRANSISTOR TYPE E1 C1 C1 B1 E1 NPN C1 C2 B2 E2 PNP C2 SC70-6 B2 B1 Mark: .AB pin #1 E1 E2 SuperSOT-6 B1 Dot denotes pin #1 pin #1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose amplifier and switch The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO 4 V Emitter-Base Voltage 5.0 V EBO IC Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FFB3946 FMB3946 P Total Device Dissipation 300 700 mW D 2.4 5.6 Derate above 25°C mW/°C R Thermal Resistance, Junction to Ambient 415 180 °C/W θJA 1999
