FFB3904 ,NPN Multi-Chip General Purpose AmplifierFFB3904 / FMB3904 / MMPQ3904FMB3904FFB3904 MMPQ3904E2C2 B4E4B2E1 B3E3C1B2C1E2B1E1C4C2 C4B2SC70-6 C3 ..
FFB3906 ,PNP Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
FFB3906 ,PNP Multi-Chip General Purpose Amplifierapplications at collector currents of 10 µ A to 100 mA. Sourcedfrom Process 66.Absolute Maximum Rat ..
FFB3946 ,NPN & PNP General Purpose AmplifierFFB3946 / FMB3946FFB3946 FMB3946E2C2B2 TRANSISTOR TYPEE1C1C1 B1 E1 NPNC1C2 B2 E2 ..
FFB5551 ,NPN Multi-Chip General Purpose AmplifierFFB5551FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purp ..
FFB5551 ,NPN Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations
FSA1156L6X ,Low RON Low Voltage SPST Analog SwitchFeaturesThe FSA1156 and FSA1157 are high performance Single
FFB3904
NPN Multi-Chip General Purpose Amplifier
FFB3904 / FMB3904 / MMPQ3904 FMB3904 FFB3904 MMPQ3904 E2 C2 B4 E4 B2 E1 B3 E3 C1 B2 C1 E2 B1 E1 C4 C2 C4 B2 SC70-6 C3 B1 E2 C3 pin #1 Mark: .1A E1 B1 C2 pin #1 C2 C1 NOTE: The pinouts are symmetrical; pin 1 and pin C1 SOIC-16 pin #1 4 are interchangeable. Units inside the carrier can SuperSOT-6 be of either orientation and will not affect the Mark: MMPQ3904 Mark: .1A functionality of the device. Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 60 V 4 CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FFB3904 FMB3904 MMPQ3904 P Total Device Dissipation 300 700 1,000 mW D 2.4 5.6 8.0 Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient 415 180 R °C/W θJA Effective 4 Die 125 °C/W Each Die 240 °C/W 1998
