FEP16JTA ,Fast Rectifiers (Glass Passivated)Features PIN 1-CASEPIN 3• Low forward voltage drop.PIN 2Negative CTSuffix "A"• High surge current ..
FEP16JTD ,Fast Rectifiers (Glass Passivated)Features PIN 1-CASEPIN 3• Low forward voltage drop.PIN 2Negative CTSuffix "A"• High surge current ..
FEP30BP ,Dual Ultrafast Plastic Rectifier, Forward Current 30 A21-Mar-02 1FEP30AP thru FEP30JPVishay Semiconductorsformerly General SemiconductorRatings and Chara ..
FEP30DP ,Dual Ultrafast Plastic Rectifier, Forward Current 30 AFeatures0.245 (6.2) 0.645 (16.4) 0.203 (5.16)• Plastic package has Underwriters Laboratory 0.225 ( ..
FEP30DP ,Dual Ultrafast Plastic Rectifier, Forward Current 30 A21-Mar-02 1FEP30AP thru FEP30JPVishay Semiconductorsformerly General SemiconductorRatings and Chara ..
FEP30DP ,Dual Ultrafast Plastic Rectifier, Forward Current 30 AFEP30AP thru FEP30JPVishay Semiconductorsformerly General SemiconductorDual Ultrafast Plastic Recti ..
FS70VSJ-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FS75R12KT3 , EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FS7KM-16 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS7KM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FEP16JTA
Fast Rectifiers (Glass Passivated)
FEP16AT - FEP16JT PIN 1 + CASE PIN 3 FEP16AT - FEP16JT PIN 2 Positive CT Features PIN 1 - CASE PIN 3 • Low forward voltage drop. PIN 2 Negative CT Suffix "A" • High surge current capacity. 1 2 • High current capability. PIN 1 3 AC TO-220AB CASE • High reliability. PIN 3 PIN 2 Doubler Suffix "D" Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Units Parameter 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT V Maximum Repetitive Reverse 50 100 150 200 300 400 500 600 V RRM Voltage I Average Rectified Forward Current, F(AV) 16 A .375 " lead length @ T = 100°C A I Non-repetitive Peak Forward Surge FSM Current 200 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 8.33 W D R Thermal Resistance, Junction to Ambient 15 °C/W θJA Thermal Resistance, Junction to Lead 2.2 R °C/W θJL Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Units Parameter 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT V Forward Voltage @ 8.0A 0.95 1.3 1.5 V F t Reverse Recovery Time rr 35 50 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR I Reverse Current @ rated V R R 10 μA T = 25 C ° A 500 μA T = 100°C A C Total Capacitance pF T 85 60 V = 4.0. f = 1.0 MHz R 2001 FEP16AT - FEP16JT, Rev. C
