FDZ7064S ,30V N-Channel PowerTrench SyncFET BGA MOSFETApplications · High power and current handling capability. · DC/DC converters DPin 1D D D DD DD S S ..
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FDZ7064S
30V N-Channel PowerTrench SyncFET BGA MOSFET
May 2004
FDZ7064S
30V N-Channel PowerTrench SyncFETTM BGA MOSFET
General Description This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging
and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON).
Applications DC/DC converters
Features 13.5 A, 30 V. RDS(ON) = 7 mW @ VGS = 10 V RDS(ON) = 9 mW @ VGS = 4.5 V Occupies only 14 mm2 of PCB area. Only 42% of the
area of SO-8 Ultra-thin package: less than 0.8 mm height when
mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability. DG
Pin 1 Bottom
Pin 1
Top
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±16 V
ID Drain Current – Continuous (Note 1a) 13.5 A – Pulsed 60
PD Power Dissipation (Steady State) (Note 1a) 2.2 W
TJ, Tstg Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics - Thermal Resistance, Junction-to-Ambient (Note 1a) 56 °C/W - Thermal Resistance, Junction-to-Ball (Note 1) 4.5 - Thermal Resistance, Junction-to-Case (Note 1) 0.6
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity 7064S FDZ7064S 13” 12mm 3000
