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FDZ5047N
30V N-Channel Logic Level PowerTrench BGA MOSFET
FDZ5047N F5047 February 2002 FDZ5047N Ò Ò 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with · 22 A, 30 V. R = 2.9 mW @ V = 10 V DS(ON) GS state of the art BGA packaging, the FDZ5047N R = 4.5 mW @ V = 4.5 V DS(ON) GS minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging 2 · Occupies only 27.5 mm of PCB area: technology which enables the device to combine excellent thermal transfer characteristics, high current 1/5 of the area of a TO-220 package handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). · Ultra-thin package: less than 0.80 mm height when mounted to PCB These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · Outstanding thermal transfer characteristics R specifications resulting in DC/DC power supply DS(ON) designs with higher overall efficiency. · Ultra-low gate charge x R product DS(ON) Applications · DC/DC converters · Solenoid drive D D D D D D D Pin 1 D S S S S D D S S S S D D S S S S D G D S S S S D G D S S S D Pin 1 S Bottom Top o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V V Gate-Source Voltage GSS ±20 I Drain Current – Continuous (Note 1a) 22 A D – Pulsed 75 PD Total Power Dissipation @ T = 25°C 2.8 W A T , T Operating and Storage Junction Temperature Range –50 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 44 RqJA °C/W R Thermal Resistance, Junction-to-Ball (Note 1) 2.7 qJB Thermal Resistance, Junction-to-Case (Note 1) 0.3 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 5047N FDZ5047N 13’’ 12mm 3000 units Ó2002 . FDZ5047N Rev D2(W)
