FDZ209N ,60V N-Channel PowerTrench BGA MOSFETApplications · Outstanding thermal transfer characteristics: 4 times better than SSOT-6 · Solenoid ..
FDZ2554P ,Dual P-Channel 2.5V Specified PowerTrench BGA MOSFETApplications• Outstanding thermal transfer characteristics:• Battery managementsignificantly better ..
FDZ2554P ,Dual P-Channel 2.5V Specified PowerTrench BGA MOSFETFeaturesCombining Fairchild’s advanced 2.5V specified• –6.5 A, –20 V. R = 28 mΩ @ V = –4.5 VDS(ON) ..
FDZ291P ,P-Channel 1.5 V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
FDZ293P ,-20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETGeneral Descriptionto PCBCombining Fairchild’s advanced 2.5V specified PowerTrench Outstanding ther ..
FDZ294N ,N-Channel 2.5V Specified PowerTrench® BGA MOSFETApplications • Outstanding thermal transfer characteristics: • Battery management 4 times better t ..
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FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FDZ209N
60V N-Channel PowerTrench BGA MOSFET
May 2004 Ó2004 FDZ209N Rev B2 (W)
FDZ209N
60V N-Channel PowerTrench BGA MOSFET
General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine
excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
Applications Solenoid Drivers
Features 4 A, 60 V. RDS(ON) = 80 mW @ VGS = 5 V Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: 4 times better than SSOT-6 Ultra-low Qg x RDS(ON) figure-of-merit High power and current handling capability
Bottom
Index slot
Top S
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) 4 A – Pulsed 20
PD Power Dissipation (Steady State) (Note 1a) 2 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 64 °C/W
RqJB Thermal Resistance, Junction-to-Ball (Note 1) 8
RqJC Thermal Resistance, Junction-to-Case (Note 1) 0.7
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity 209N FDZ209N 7’’ 8mm 3000 units
Index
slot G D D D D
