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FDY302NZ
Single N-Channel 2.5V Specified PowerTrench?MOSFET
® ® ® ® FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET July 2006 FDY302NZ ® ® ® ® Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed • 600 mA, 20 V R = 300 mΩ @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced Power R =500 mΩ @ V = 2.5 V Trench process to optimize the R @V =2.5V. DS(ON) GS DS(ON) GS Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant 1S G 1 G 3 D S 2 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Unit s V Drain-Source Voltage 20 V DS V Gate-Source Voltage V GS ± 12 I Drain Current – Continuous (Note 1a) 600 mA D –Pulsed 1000 P Power Dissipation (Steady State) (Note 1a) 625 mW D (Note 1b) 446 T ,T Operating and Storage Junction Temperature –55 to +150 J STG °C Range Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 200 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 280 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity E FDY302NZ 7 ’’ 8 mm 3000 units ©2006 FDY302NZ Rev A
