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FDY301NZ
20V Single N-Channel 2.5V Specified PowerTrench?MOSFET
January 2006 Ó2006 FDY301NZ Rev A
FDY301NZ
Single N-Channel 2.5V Specified PowerTrenchÒÒÒÒ
MOSFET
General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.
Applications Li-Ion Battery Pack
Features 200 mA, 20 V RDS(ON) = 5 W @ VGS = 4.5 V RDS(ON) = 7 W @ VGS = 2.5 V ESD protection diode (note 3) RoHS Compliant
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ± 12 V
ID Drain Current – Continuous (Note 1a) 1a) 200 mA – Pulsed 1000
PD Power Dissipation (Steady State) (Note 1a) 1a) 625 mW (Note 1b) 1 446
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200 °C/W
RqJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 280
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDY301NZ 7’’ 8 mm 3000units
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