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FDY300NZ
20V Single N-Channel 2.5V Specified PowerTrench?MOSFET
January 2007
Ó2007
FDY300NZ RevB
FDY300NZ
Single N-Channel 2.5V Specified PowerTrenchÒÒÒÒ MOSFET
General Description
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductors advanced Power
Trench processto optimizethe RDS(ON)@ VGS= 2.5v.
Applications Li-Ion Battery Pack
Features 600 mA,20V RDS(ON)= 700 mW @VGS=4.5V
RDS(ON)= 850 mW@VGS=2.5V ESD protection diode (note3) RoHS Compliant
Absolute Maximum Ratings TA=25o Cunless otherwise noted
Symbol Parameter Ratings Unit
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V Drain Current Continuous (Note1a)1a) 600 mA Pulsed 1000 Power Dissipation (Steady State) (Note1a)1a) 625 mW
(Note1b)1 446
TJ, TSTG Operating and Storage Junction Temperature
Range
55to +150 °C
Thermal Characteristics
RqJA Thermal Resistance, Junction-to-Ambient (Note1a)1a) 200 °C/W
RqJA Thermal Resistance, Junction-to-Ambient (Note1b)1 280
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDY300NZ 7 8 mm 3000 units
ÒÒÒÒS
January 2007
