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FDY2000PZ
-20V Dual P-Channel Specified PowerTrench?MOSFET
January 2006 Ó2006
FDY2000PZ Rev A
FDY2000PZ
Dual P-Channel (– 2.5V) Specified PowerTrenchÒÒÒÒ
MOSFET
General Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v.
Applications Li-Ion Battery Pack
Features – 350 mA, – 20 V RDS(ON) = 1.2 W @ VGS = – 4.5 V RDS(ON) = 1.6 W @ VGS = – 2.5 V ESD protection diode (note 3) RoHS Compliant
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage – 20 V
VGSS Gate-Source Voltage ± 8 V
Drain Current – Continuous (Note 1a) 1a) – 350 ID – Pulsed – 1000
mA
Power Dissipation (Steady State) (Note 1a) 1a) 625 PD (Note 1b) 1 446
mW
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200
RqJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 280
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDY2000PZ 7 ’’ 8 mm 3000 units
ÒÒÒÒ
2 S1 D1
G2
S2 D2
G1
5 2
