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FDW9926NZ
20V Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDW9926NZ G1 G2 S1 S2 S1 S2 D1 D2 January 2005 FDW9926NZ Ò Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged · 4.5 A, 20 V. R = 32 mW @ V = 4.5 V DS(ON) GS gate version of Fairchild's Semiconductor’s advanced R = 45 mW @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate · ESD protection diode (note 3) drive voltage (2.5V – 10V). · High performance trench technology for extremely Applications low R @ V = 2.5 V DS(ON) GS · Battery protection · Low profile TSSOP-8 package · Load switch · Power management TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 4.5 A D – Pulsed 30 P Total Power Dissipation (Note 1a) 1.6 W D (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 77 R °C/W qJA (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9926NZ FDW9926NZ 13’’ 12mm 2500 units Ó2005 FDW9926NZ Rev. D(W)
