FDW262P ,20V P-Channel PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is produced • –4.5 A, –20 V. R = 47 mΩ @ V = –4.5 V ..
FDW262P_NL ,20V P-Channel PowerTrench MOSFETApplications • Low gate charge (13nC typical) • Power management • High performance trench technolo ..
FDW264P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW6923 ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky DiodeFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 ..
FDW9926 ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications GSS• Battery protection• High performance trench technology for extremelylow R• Load s ..
FDW9926A ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 4.5 A, 20 V. R = 32 mΩ @ V = 4.5 V DS( ..
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW262P
20V P-Channel PowerTrench MOSFET
FDW262P D G S S S S D D June 2001 FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced • –4.5 A, –20 V. R = 47 mΩ @ V = –4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 65 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process that has been especially tailored R = 100 mΩ @ V = –1.8 V to minimize the on-state resistance and yet maintain DS(ON) GS low gate charge for superior switching performance. • R rated for use with 1.8 V logic DS(ON) Applications • Low gate charge (13nC typical) • Power management • High performance trench technology for extremely • Load switch low R DS(ON) • Low profile TSSOP-8 package 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain–Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –4.5 A D – Pulsed –40 Power Dissipation for Single Operation (Note 1a) 1.3 P W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W θJA (Note 1b) 133 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 262P FDW262P 13’’ 16mm 3000 units FDW262P Rev C(W) 2001
