FDW258P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW262P ,20V P-Channel PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is produced • –4.5 A, –20 V. R = 47 mΩ @ V = –4.5 V ..
FDW262P_NL ,20V P-Channel PowerTrench MOSFETApplications • Low gate charge (13nC typical) • Power management • High performance trench technolo ..
FDW264P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW6923 ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky DiodeFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 ..
FDW9926 ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications GSS• Battery protection• High performance trench technology for extremelylow R• Load s ..
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW258P
P-Channel 1.8V Specified PowerTrench MOSFET
FDW258P G D S S S S D D January 2002 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged • –9 A, –12 V. R = 11 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 14 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power R = 20 mΩ @ V = –1.8 V management applications with a wide range of gate DS(ON) GS drive voltage (1.8V – 8V). • Rds ratings for use with 1.8 V logic Applications • Low gate charge • Load switch • High performance trench technology for extremely • Motor drive low R DS(ON) • DC/DC conversion • Power management • Low profile TSSOP-8 package 5 4 6 3 7 2 TSSOP-8 8 1 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1) –9 A D – Pulsed –50 PD Power Dissipation (Note 1a) 1.3 W (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 87 R °C/W θJA (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 258P FDW258P 13’’ 12mm 3000 units FDW258P Rev D (W) 2002
