FDW254PZ ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is a rugged • –9.2 A, –20 V. R = 12 mΩ @ V = –4.5 ..
FDW256P ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8 A, –30 V R = 13.5 mΩ @ V = –10 V DS ..
FDW258P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW262P ,20V P-Channel PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is produced • –4.5 A, –20 V. R = 47 mΩ @ V = –4.5 V ..
FDW262P_NL ,20V P-Channel PowerTrench MOSFETApplications • Low gate charge (13nC typical) • Power management • High performance trench technolo ..
FDW264P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
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FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FDW254PZ
P-Channel 1.8V Specified PowerTrench MOSFET
FDW254PZ D G S S S S D D March 2003 FDW254PZ Ò P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged · –9.2 A, –20 V. R = 12 mW @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 15 mW @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power R = 21.5 mW @ V = –1.8 V management applications with a wide range of gate DS(ON) GS drive voltage (1.8V – 8V). · Rds ratings for use with 1.8 V logic Applications · ESD protection diode · Load switch · Low gate charge · Motor drive · High performance trench technology for extremely · DC/DC conversion low R DS(ON) · Power management · Low profile TSSOP-8 package 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1) –9.2 A D – Pulsed –50 P Power Dissipation (Note 1a) 1.4 W D (Note 1b) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 96 °C/W qJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 254PZ FDW254PZ 13’’ 12mm 3000 units FDW254PZ Rev C (W) Ó2003
