FDW254P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• Low gate charge• Load switch• High performance trench technology for extremely• Motor ..
FDW254PZ ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is a rugged • –9.2 A, –20 V. R = 12 mΩ @ V = –4.5 ..
FDW256P ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8 A, –30 V R = 13.5 mΩ @ V = –10 V DS ..
FDW258P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW262P ,20V P-Channel PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is produced • –4.5 A, –20 V. R = 47 mΩ @ V = –4.5 V ..
FDW262P_NL ,20V P-Channel PowerTrench MOSFETApplications • Low gate charge (13nC typical) • Power management • High performance trench technolo ..
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW254P_NL
P-Channel 1.8V Specified PowerTrench MOSFET
FDW254P D G S S S S D D January 2001 FDW254P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged • –9.2 A, –20 V. R = 12 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 15 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power R = 21.5 mΩ @ V = –1.8 V management applications with a wide range of gate DS(ON) GS drive voltage (1.8V – 8V). • Rds ratings for use with 1.8 V logic Applications • Low gate charge • Load switch • High performance trench technology for extremely • Motor drive low R DS(ON) • DC/DC conversion • Power management • Low profile TSSOP-8 package 5 4 6 3 7 2 TSSOP-8 8 1 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage V –20 V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1) A D –9.2 – Pulsed –50 PD Power Dissipation (Note 1a) 1.3 W (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range J STG °C –55 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 96 R °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 254P FDW254P 13’’ 12mm 3000 units 2001 FDW254P Rev D (W)
