FDW2516NZ ,Common Drain N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDW2521C ,Complementary PowerTrench MOSFET
FDW2521C ,Complementary PowerTrench MOSFET
FDW2521C ,Complementary PowerTrench MOSFET
FDW254P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET is a rugged• –9.2 A, –20 V. R = 12 mΩ @ V = –4.5 VDS(O ..
FDW254P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• Low gate charge• Load switch• High performance trench technology for extremely• Motor ..
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FS30ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS30ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS30KMJ-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FDW2516NZ
Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDW2516NZ D G2 D S2 D G1 D S1 March 2003 FDW2516NZ Ò Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed · 5.8 A, 20 V R = 30 mW @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 40 mW @ V = 2.5 V DS(ON) GS PowerTrench process to optimize the R @ V = DS(ON) GS 2.5v on special TSSOP-8 lead frame with all the drains · Isolated source and drain pins on one side of the package. · ESD protection diode (note 3) Applications · Li-Ion Battery Pack · High performance trench technology for extremely low R @ V = 2.5 V DS(ON) GS · Low profile TSSOP-8 package 1 8 2 7 3 6 TSSOP-8 Pin 1 4 5 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 5.8 A D – Pulsed 20 Power Dissipation for Single Operation (Note 1a) 1.6 P W D (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 77 °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1b) 114 R °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2516NZ FDW2516NZ 13’’ 12mm 3000 units Ó2003 FDW2516NZ Rev B
