FDW2511NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETFDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFETDecember 2004FDW2511NZDual N-Channel 2.5 ..
FDW2511NZ_NL ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETapplications.! High performance trench technology for extremely lowrDS(ON)! Low profile TSSOP-8 pac ..
FDW2511NZ_NL ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description! 7.1A, 20V r =0.020Ω, V = 4.5VDS(ON) GSThis N-Channel MOSFET is produced usi ..
FDW2512NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description! 6A, 20V r = 0.028Ω, V = 4.5V This N-Channel MOSFET is produced using Fai ..
FDW2516NZ ,Common Drain N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDW2521C ,Complementary PowerTrench MOSFET
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FDW2511NZ-FDW2511NZ_NL
20V Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET December 2004 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features General Description ! 7.1A, 20V r =0.020Ω, V = 4.5V DS(ON) GS This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has r =0.025Ω, V = 2.5V DS(ON) GS been especially tailored to minimize the on-state resistance ! Extended V range (±12 V) for battery applications GS and yet maintain low gate charge for superior switching performance. These devices are well suited for portable ! HBM ESD Protection Level of 3.5kV Typical (note 3) electronics applications. ! High performance trench technology for extremely low r DS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! Battery charge ! Battery disconnect circuits G2 D1 D2 S2 S2 D2 G1 S1 S1 G1 G2 D1 Pin 1 S1 S2 TSSOP-8 ©2004 1 FDW2511NZ Rev. A
