FDW2510NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDW2511NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETFDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFETDecember 2004FDW2511NZDual N-Channel 2.5 ..
FDW2511NZ_NL ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETapplications.! High performance trench technology for extremely lowrDS(ON)! Low profile TSSOP-8 pac ..
FDW2511NZ_NL ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description! 7.1A, 20V r =0.020Ω, V = 4.5VDS(ON) GSThis N-Channel MOSFET is produced usi ..
FDW2512NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description! 6A, 20V r = 0.028Ω, V = 4.5V This N-Channel MOSFET is produced using Fai ..
FDW2516NZ ,Common Drain N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
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FDW2510NZ
20V Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2510NZ G2 G1 S1 S2 S1 S2 D2 D1 April 2004 FDW2510NZ Ò Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged · 6.4 A, 20 V R = 24 mW @ V = 4.5 V DS(ON) GS gate version of Fairchild’s Semiconductor’s advanced R = 32 mW @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate · Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). · ESD protection diode (note 3) Applications · Li-Ion Battery Pack · High performance trench technology for extremely low R DS(ON) · Low profile TSSOP-8 package TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 6.4 A D – Pulsed 30 P Power Dissipation for Single Operation (Note 1a) 1.6 W D (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 77 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 114 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2510NZ FDW2510NZ 13’’ 12mm 3000 units Ó2004 FDW2510NZ Rev C(W)
