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FDW2508P_NL
Dual P-Channel 1.8 V Specified PowerTrench MOSFET
FDW2508P G1 G2 S1 S2 S1 S2 D1 D2 December 2001 FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses • –6 A, –12 V. R = 18 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 22 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management R = 30 mΩ @ V = –1.8 V applications. DS(ON) GS Applications • Low gate charge(26nC typical) • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Low profile TSSOP-8 package • Battery protection 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –12 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1) –6 A D – Pulsed –30 P Power Dissipation for Single Operation (Note 1a) 1.3 W D (Note 1b) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 100 R °C/W θJA (Note 1b) 125 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2508P FDW2508P 13’’ 12mm 2500 units FDW2508P Rev. E (W) 2001
